Flexible Zinc Oxide Thin-Film Transistors using Oxide buffer layers on Polyethylene Napthalate Substrates
Flexible Zinc Oxide Thin-Film Transistors using Oxide buffer layers on Polyethylene Napthalate Substrates
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在聚萘二甲酸乙二醇酯基板上使用氧化物缓冲层的柔性氧化锌薄膜晶体管
DOI：
10.1109/imfedk.2011.5944860
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
M.Inoue
中科院分区：
文献类型：
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作者：
T.Higaki;T.Tachibana;Y.Kimura;T.Maemoto;S.Sasa;M.Inoue
我们报告的柔性ZnO薄膜晶体管（TFT）使用多层氧化物缓冲层的制造和表征。采用脉冲激光沉积（PLD）法在室温下制备了以聚萘二甲酸乙二醇酯（PEN）为衬底的ZnO-TFT。ZnO薄膜的特征在于霍尔效应测量。电子迁移率和载流子密度分别为52.4 cm ~ 2/Vs和3.2× 1017 cm ~（-3）。采用HfO 2电介质薄膜作为高k材料栅极绝缘体，制作了顶栅型TFT。采用SiO2/TiO 2缓冲层的ZnO薄膜晶体管的阈值电压Vth为-1.2 V，通断电流比gm为2.4× 106，通断电流gm为1.7 mS/mm。
We report on the fabrication and characterization of flexible ZnO thin-film transistors (TFTs) using multilayer oxide buffer layers. ZnO-TFTs on polyethylene napthalate (PEN) substrates were fabricated by pulsed laser deposition (PLD) at room temperature (RT). ZnO films were characterized by Hall effect measurements. The electron mobility and the carrier density were 52.4 cm2/Vs and 3.2×1017cm-3. Top-gate-type TFTs were fabricated from a thin film of HfO2dielectric as a high-k material gate insulator. A transconductance, gm, of 1.7 mS/mm, an on/off-current ratio of 2.4×106and a threshold voltage, Vth, of -1.2 V were achieved for a ZnO TFT with a SiO2/TiO2buffer layer.