Characterization of Static and Dynamic Behaviors in AlGaN/GaN-on-Si Power Transistors With Photonic-Ohmic Drain
Characterization of Static and Dynamic Behaviors in AlGaN/GaN-on-Si Power Transistors With Photonic-Ohmic Drain
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DOI：
10.1109/ted.2016.2567442
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发表时间：
2016-05
影响因子：
3.1
通讯作者：
Xi Tang;Baikui Li;Zhaofu Zhang;Gaofei Tang;Jin Wei;K. J. Chen
中科院分区：
文献类型：
--
作者：
Xi Tang;Baikui Li;Zhaofu Zhang;Gaofei Tang;Jin Wei;K. J. Chen
本文系统地研究了利用集成光子欧姆漏极（PODFET）的AlGaN/GaN-on-Si功率场效应管的静态和动态性能。阐述了光电场效应晶体管的工作机理，包括光子产生的条件和相关的物理过程。在两种硬开关条件下进行了动态开关试验。由于光子产生和沟道电流固有的同步开关，深电子陷阱的光子泵送可以显著提高PODFET的动态性能。此外，所产生的光子被证明被限制在漏极附近，而不会对器件性能造成不利影响（例如，关闭状态泄漏退化）。
In this paper, static and dynamic performances of an AlGaN/GaN-on-Si power FET utilizing the integrated photonic-ohmic drain (PODFET) were systematically investigated. The operational mechanisms of the PODFET, including both the conditions of photon generation and the related physical processes, were explained. The dynamic switching tests were carried out under two types of hard switching conditions. With the photon generation and channel current inherently switched ON and OFF in synchronization, the dynamic performances of the PODFET can be significantly enhanced owing to photon pumping of deep electron traps. In addition, the generated photons were proved to be confined in proximity of the drain terminal without causing adverse effects on the device performances (e.g., the OFF-state leakage degradation).