A direct transfer of layer-area graphene

A direct transfer of layer-area graphene
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DOI:
10.1063/1.3337091
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发表时间:
2010-03-15
影响因子:
4
通讯作者:
Zettl, A.
Zettl, A.
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Regan, William;Alem, Nasim;Zettl, A.

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本文报道了一种直接(无聚合物)将层面积石墨烯从金属生长衬底转移到选定的目标衬底的简便方法。直接路径,通过避免几个湿的化学步骤和伴随的机械应力和污染,所有目前报道的层面积石墨烯转移方法,使层面积石墨烯器件的制造具有前所未有的质量。为了证明这一点,我们直接将层面积石墨烯从Cu生长衬底转移到多孔无定形碳透射电子显微镜(TEM)网格上,从而产生坚固,清洁,全覆盖的石墨烯网格,是高分辨率TEM的理想选择。
A facile method is reported for the direct (polymer-free) transfer of layer-area graphene from metal growth substrates to selected target substrates. The direct route, by avoiding several wet chemical steps and accompanying mechanical stresses and contamination common to all presently reported layer-area graphene transfer methods, enables fabrication of layer-area graphene devices with unprecedented quality. To demonstrate, we directly transfer layer-area graphene from Cu growth substrates to holey amorphous carbon transmission electron microscopy (TEM) grids, resulting in robust, clean, full-coverage graphene grids ideal for high resolution TEM.