Highly c-axis-oriented ScAlN thin films deposited using Sc-Al alloy target
Highly c-axis-oriented ScAlN thin films deposited using Sc-Al alloy target
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DOI：
10.1109/mwsym.2015.7166841
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发表时间：
2015-05
期刊：
影响因子：
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通讯作者：
S. Fujii;M. Sumisaka;G. Tang;Yusuke Suzuki;S. Otomo;T. Omori;K. Hashimoto
中科院分区：
文献类型：
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作者：
S. Fujii;M. Sumisaka;G. Tang;Yusuke Suzuki;S. Otomo;T. Omori;K. Hashimoto
采用常规射频磁控溅射系统，采用两种不同Sc/Al比的Sc-Al合金靶制备了ScAlN薄膜。10小时的沉积时间在Sc0.43-Al0.57和Sc0.32-Al0.68靶上获得了高度c轴取向的ScAlN薄膜，其中Sc浓度分别为32at%和22at%。在Sc0.43-Al0.57靶上沉积的薄膜在溅射时间超过50 h后失去了C轴取向。XDS分析表明，高Sc含量的ScAlN薄膜与非晶相层附近的Si衬底表面。c轴取向的ScAlN的种子层允许在Sc0.43-Al0.57靶上沉积> 50 h以产生高度c轴取向的ScAlN膜。基于ScAlN/Si结构的单端口表面声波（SAW）谐振器在2GHz下具有2.7%的K2值，比基于AlN/Si结构的大六倍。
ScAlN thin films were deposited by a conventional radiofrequency (RF)-magnetron sputtering system using two Sc-Al alloy metal targets with different Sc/Al ratios. A 10 h deposition time resulted in highly c-axis-oriented ScAlN thin films with Sc concentrations of 32 at% and 22 at% on Sc0.43-Al0.57 and Sc0.32-Al0.68 targets, respectively. C-axis orientation was lost in thin films deposited on the Sc0.43-Al0.57 target after sputtering times of over 50 h. XDS analysis showed a high-Sc-content ScAlN film with an amorphous phase layer near the Si substrate surface. A seed layer of c-axis-oriented ScAIN allowed for > 50 h deposition on the Sc0.43-Al0.57 target to result in highly c-axis-oriented ScAlN films. A one-port surface acoustic wave (SAW) resonator based on the ScAlN/Si structure has a K2 value of 2.7% at 2 GHz, six times larger than for that based on the AlN/Si structure.