Temperature and Magnetic Field Effects on the Transport Controlled Charge State of a Single Quantum Dot
Temperature and Magnetic Field Effects on the Transport Controlled Charge State of a Single Quantum Dot
复制标题
温度和磁场对单量子点输运控制电荷态的影响
作者：
L. Larsson;M. Larsson;E. Moskalenko;P. Holtz
通过微光致发光研究单个 InAs/GaAs 量子点。通过改变所施加的外部磁场的强度和/或温度，可以调节单个量子点的电荷状态。这种调谐效应被证明与捕获到量子点之前的面内电子和空穴传输有关，因为光激发载流子主要在势垒中产生。
Individual InAs/GaAs quantum dots are studied by micro-photoluminescence. By varying the strength of an applied external magnetic field and/or the temperature, it is demonstrated that the charge state of a single quantum dot can be tuned. This tuning effect is shown to be related to the in-plane electron and hole transport, prior to capture into the quantum dot, since the photo-excited carriers are primarily generated in the barrier.