Subcells Analysis of Thin-Film Four-Junction Solar Cells Using Optoelectronic Reciprocity Relation
Subcells Analysis of Thin-Film Four-Junction Solar Cells Using Optoelectronic Reciprocity Relation
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利用光电互易关系对薄膜四结太阳能电池进行子电池分析
DOI：
10.1002/solr.202000542
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发表时间：
2021-01-15
期刊：
影响因子：
7.9
通讯作者：
Lu, Shulong
中科院分区：
文献类型：
--
作者：
Long, Junhua;Sun, Qiangjian;Lu, Shulong
制备了带隙为1.96/1.53/1.16/0.83 eV的AlGaInP/AlGaAs/InGaAs/InGaAs反相变质多结太阳电池。在AM1.5G光谱下，光电转换效率达到34.89%，开路电压为3.54V。单个子电池的分析是评价多结太阳电池性能的关键。利用外量子效率与不同注入电流密度电致发光之间的光电互易关系，计算了四个子电池的电流密度-电压特性。对四个子电池性能特征的分析表明，限制整体效率提高的关键是AlGaInP顶部子电池的深能级复合和0.83 eV InGaAs底部子电池的体复合。顶部子电池和底部子电池的目标优化预计将显著提高效率。
A thin-film AlGaInP/AlGaAs/InGaAs/InGaAs inverted metamorphic multijunction solar cell with a bandgap of 1.96/1.53/1.16/0.83 eV is fabricated. The photoelectric conversion efficiency reaches 34.89% with an open-circuit voltage of 3.54 V under AM1.5 G spectrum. The analysis of individual subcells is the key to evaluating the performance of multijunction solar cells. The current density versus voltage characteristics of four subcells are calculated using optoelectronic reciprocity relation between the external quantum efficiency and the different injection current densities electroluminescence. The analysis of the performance characteristics of four subcells concludes that the key to limiting the overall efficiency improvement is the deep-level recombination of the AlGaInP top subcell and the bulk recombination of 0.83 eV InGaAs bottom subcell. Targeted optimization of the top subcell and the bottom subcell is expected to significantly improve efficiency.