Crystalline SiC on Si and High Temperature Operational Devices
Crystalline SiC on Si and High Temperature Operational Devices
复制标题
Si 上的晶体 SiC 和高温运行器件
DOI：
10.1007/978-3-642-75048-9_1
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发表时间：
1989
期刊：
影响因子：
--
通讯作者：
H. Matsunami
中科院分区：
文献类型：
--
作者：
H. Matsunami
Single crystals of cubic SiC were reproducibly grown on Si by chemical vapor deposition (CVD) using a carbonized layer on Si to overcome the large lattice mismatch of 20% between SiC and Si. Structures of the carbonized layer were elucidated. Crystal growth of cubic SiC on different crystal planes of Si substrates was examined, and the orientation for better epitaxial growth was determined. Antiphase domains were observed in cubic SiC grown on (100) substrates. The use of Si (100) substrates with off-axis orientation towards [011] is useful for the growth of antiphase-domain free SiC. Electrical properties of the grown layers were measured, and anisotropy in electron mobility was found in the grown layer on Si (100) with off-axis orientation. Ion implantation and fabrication of electronic devices were carried out.
