GaN/InGaN heterojunction bipolar transistors with ultra‐high d.c. power density (>3 MW/cm2)
GaN/InGaN heterojunction bipolar transistors with ultra‐high d.c. power density (>3 MW/cm2)
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具有超高直流功率密度 (>3 MW/cm2) 的 GaN/InGaN 异质结双极晶体管
DOI：
10.1002/pssa.201100436
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
S. Shen
中科院分区：
文献类型：
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作者：
Yi;Yun Zhang;Z. Lochner;H. Kim;J. Ryou;R. Dupuis;S. Shen
我们报告了npn GaN/InGaN双异质结双极晶体管（DHBTs）的超高功率性能，该晶体管直接生长在自由支撑（FS）GaN衬底上。测得的共发射极电流增益（hfe）达到80。准静态I-V测量表明，对于在FS-GaN衬底上生长的DHBT，可以实现JC > 141 kA/cm 2和3.05 MW/cm 2的功率密度。当温度升高到250 °C时，GaN/InGaN DHBT显示hfe = 43，失调电压从室温下的0.8 V降低到0.3 V。类似地，拐点电压从室温下的5.2 V降低到250 °C下的2.75 V。在该特定器件中，击穿电压（BVCEO）从室温下的90 V增加到250 °C下的157 V。
We report ultra‐high‐power performance on npn GaN/InGaN double heterojunction bipolar transistors (DHBTs) that is directly grown on a free‐standing (FS) GaN substrate. Measured common‐emitter current gain (hfe) reaches 80. A quasi‐static I–V measurement shows that JC > 141 kA/cm2 and a power density of 3.05 MW/cm2 can be achieved for DHBTs grown on an FS‐GaN substrate. When the temperature is increased to 250 °C, a GaN/InGaN DHBT shows hfe = 43 and the offset voltage is reduced from 0.8 V at the room temperature to 0.3 V. Similarly, the knee voltage is reduced from 5.2 V at room temperature to 2.75 V at 250 °C. In this particular device, breakdown voltage (BVCEO) increases from 90 V at room temperature to 157 V at 250 °C.