INITIAL-STAGES OF EPITAXIAL-GROWTH OF Y-STABILIZED ZRO2 THIN-FILMS ON A-SIOX/SI(001) SUBSTRATES
INITIAL-STAGES OF EPITAXIAL-GROWTH OF Y-STABILIZED ZRO2 THIN-FILMS ON A-SIOX/SI(001) SUBSTRATES
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DOI：
10.1063/1.356183
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发表时间：
1994-03-15
影响因子：
3.2
通讯作者：
SAMWER, K
中科院分区：
文献类型：
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作者：
BARDAL, A;MATTHEE, T;SAMWER, K
利用透射电镜（TEM）和反射高能电子衍射（RHEED）研究了在非晶天然氧化物覆盖的Si（001）衬底上外延y稳定ZrO2 （YSZ）薄膜的结晶和生长的初始阶段。YSZ采用固相外延方式结晶，初始厚度为1nm。结晶最初是不完全的，产生YSZ薄膜的外延区和无序区。原位RHEED测量表明，YSZ的晶格参数在生长过程中逐渐减小，在膜厚为5-7 nm时达到体积值。对于较大的厚度，薄膜是完全弹性松弛的。透射电镜显示在YSZ/Si界面处存在错配位错。失配位错（Burgers vector b = 1/2）之间的平均间距为8.3 nm[110]，表明失配位错可以完全适应外延失配应变。在沉积温度冷却期间引入的热应变是完全弹性调节的。当YSZ厚度小于7 nm时，YSZ/Si界面处的氧化硅再生层厚度为0 ~ 0.5 nm。
The initial stages of crystallization and growth of epitaxial Y-stabilized ZrO2 (YSZ) thin films on Si (001) substrates covered with amorphous native oxide were investigated by transmission electron microscopy (TEM) and reflection high-energy electron diffraction (RHEED). The YSZ crystallizes by solid-phase epitaxy with an initial thickness of 1 nm. The crystallization is initially incomplete, yielding both epitaxial and disordered regions of the YSZ film. In situ RHEED measurements showed the lattice parameter of the YSZ gradually decreased during growth, reaching the bulk value at a film thickness of 5-7 nm. For a larger thickness, the film is fully elastically relaxed. TEM revealed misfit dislocations at the YSZ/Si interface. The average spacing between misfit dislocations with Burgers vector b = 1/2 [110] was measured as 8.3 nm, showing epitaxial misfit strain to be fully accommodated by misfit dislocations. Thermal strain introduced during cooldown from the deposition temperature is fully elastically accommodated. For YSZ thicknesses below 7 nm, the thickness of the regrown layer of silicon oxide at the YSZ/Si interface is 0-0.5 nm.