Comparison between Static and Dynamic Simulations of Ion Reflection and Sputtering from Layered Materials

Comparison between Static and Dynamic Simulations of Ion Reflection and Sputtering from Layered Materials
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层状材料离子反射和溅射的静态和动态模拟比较

DOI:
10.1143/jjap.40.5399
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发表时间:
2001
影响因子:
1.5
通讯作者:
K. Ohya
K. Ohya
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
Retsuo Kawakami;K. Ohya

文献摘要

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利用计算机模拟程序EDDY,对层状材料中离子反射和溅射的静态和动态模拟进行了比较。碳层钨块体材料的D+离子轰击和反之亦然为层状材料提供了模型。为了进行比较,描述了沉积层对发射过程的影响。静态模拟不允许固体中的原子组成变化,由于层厚度的增加,这种排放量会迅速变化。这种现象适合于W层C的动态模拟,因为W层的侵蚀和反冲注入到体中较小。对于C层W,动态模拟结果显示,由于较大的侵蚀和反冲注入的C层的渐变。因此,薄C层对体材料的反射系数和溅射产率的影响很弱。
Using the computer simulation program EDDY, a comparison between static and dynamic simulations of ion reflection and sputtering from layered materials is made. The D+ ion bombardment of a carbon-layered tungsten bulk material and vice versa serves a model for layered materials. To make the comparison, the influence of the deposition layers on the emission processes is described. The static simulation, which does not allow atomic composition changes in solids, gives a rapid change of such emissions owing to an increase in the thickness of the layers. Such a phenomenon is suitable for the dynamic simulation of W-layered C because of smaller erosion and recoil implantation into the bulk for the W layer. For C-layered W, the dynamic simulation results show gradual changes due to larger erosion and recoil implantation of the C layer. For this reason, the thin C layer has a weak effect on the reflection coefficient and the sputtering yield of the bulk.