High-temperature oxidation behavior of dense SiBCN monoliths: Carbon-content dependent oxidation structure, kinetics and mechanisms
High-temperature oxidation behavior of dense SiBCN monoliths: Carbon-content dependent oxidation structure, kinetics and mechanisms
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DOI：
10.1016/j.corsci.2017.05.013
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发表时间：
2017-08
影响因子：
8.3
通讯作者：
Daxin Li;Zhihua Yang;D. Jia;Shengjin Wang;X. Duan;Qishuai Zhu;Yang Miao;J. Rao;Yu Zhou
中科院分区：
文献类型：
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作者：
Daxin Li;Zhihua Yang;D. Jia;Shengjin Wang;X. Duan;Qishuai Zhu;Yang Miao;J. Rao;Yu Zhou
三种 SiBCN 整体材料的高温氧化行为：含有大量 Si 金属的贫碳 SiBCN、中碳 SiBCN 和含有过量碳的富碳 SiBCN，在 1500 °C 下进行了长达 15 小时的研究。 1500°C 时贫碳和中等碳整料的氧化皮生长无法用线性或抛物线速率定律来描述，而富碳整料则根据近似线性失重方程进行氧化。氧化皮的微观结构由三个不同的层组成。含非晶SiO2的碳、硼钝化层和BN(C)抗氧化性的增强都有利于抗氧化性。
The high temperature oxidation behavior of three SiBCN monoliths: carbon-lean SiBCN with substantial Si metal, carbon-moderate SiBCN and carbon-rich SiBCN with excessive carbon, was investigated at 1500 °C for times up to15 h. Scale growth for carbon-lean and −moderate monoliths at 1500 °C cannot be described by a linear or parabolic rate law, while the carbon-rich monoliths oxidize according to a approximately linear weight loss equation. The microstructures of the oxide scale compose of three distinct layers. The passivating layer of carbon and boron containing amorphous SiO2and increased oxidation resistance of BN(C) both benefit the oxidation resistance.