Nanostructuring CaF2 surfaces with slow highly charged ions
Nanostructuring CaF2 surfaces with slow highly charged ions
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具有慢速高电荷离子的纳米结构 CaF2 表面
DOI：
10.1088/1742-6596/488/1/012002
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
F. Aumayr
中科院分区：
文献类型：
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作者：
A. S. El-Said;R. A. Wilhelm;R. Heller;R. Ritter;G. Wachter;S. Facsko;C. Lemell;J. Burgdörfer;F. Aumayr
近年来，作为纳米结构化目的的工具的慢高电荷离子（HCI）的潜力已经受到了相当大的关注，并且广泛的材料类别，从绝缘离子晶体，聚合物和薄膜，到半导体和导电衬底，已经研究了它们对单独HCI影响的响应。然而，对于大多数研究的材料，仍然缺乏一致的理论模型来补充实验证据，并令人满意地解释从离子接近和影响到形成单个纳米结构的完整物理过程。从实验和理论的角度来看，CaF 2可能被认为是研究得最彻底的材料。结合大量的研究结果，允许产生的“相图”的纳米结构的CaF 2离子束参数的依赖。这为第一个统一的图像铺平了道路，因为这个相图的含义也应该适用于类似的材料。
In recent years the potential of slow highly charged ions (HCI) as tools for nanostructuring purposes has received considerable attention and a wide range of material classes, from insulating ionic crystals, polymers and ultrathin films, to semiconducting and conducting substrates have been investigated regarding their response to individual HCI impact. For the majority of investigated materials, however, consistent theoretical modeling to supplement with experimental evidence and to satisfactorily explain the complete physical process from ion approach and impact to the formation of an individual nanostructure is still lacking. CaF 2, from both an experimental and theoretical point of view, might be considered the most thoroughly investigated material. Combining results from numerous studies has allowed for the generation of a" phase diagram" for nanostructuring of CaF 2 in dependence of ion beam parameters. This paves the way for a first unified picture, as implications from this phase diagram should be applicable to similar materials as well.