Slippage of 4He films adsorbed on porous gold
Slippage of 4He films adsorbed on porous gold
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DOI：
10.1016/j.jpcs.2005.05.051
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发表时间：
2005-08
影响因子：
4
通讯作者：
Kazuhisa Wataru;J. Taniguchi;M. Hieda;Masaru Suzuki
中科院分区：
文献类型：
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作者：
Kazuhisa Wataru;J. Taniguchi;M. Hieda;Masaru Suzuki
我们使用石英晶体微天平（QCM）技术测量了吸附在多孔金基底上的非超流体 4He 薄膜的滑移。该基材具有高度均匀的多孔结构，其有效表面积比平面基材大20倍。研究发现，在一定温度TS以下，4He薄膜与衬底之间的滑移程度增加，并且TS随着4He面密度的增加而减小。这种增加很大程度上取决于石英晶体的振荡幅度。
We measured the slippage of nonsuperfluid4He films adsorbed on a porous gold substrate using the quartz-crystal microbalance (QCM) technique. The substrate has a highly uniform porous structure, and its effective surface area was 20 times larger than that of a flat substrate. It was found that the degree of slippage between4He films and the substrate increases below a certain temperature TS, and that TSdecreases with increasing4He areal density. This increase depends strongly on the oscillating amplitude of the quartz crystal.