Impact of X-Ray Exposure on a Triple-Level-Cell NAND Flash
Impact of X-Ray Exposure on a Triple-Level-Cell NAND Flash
复制标题
X 射线照射对三层单元 NAND 闪存的影响
DOI：
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发表时间：
2013
影响因子：
1.8
通讯作者：
Shawn A. Ashley
中科院分区：
文献类型：
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作者：
M. Gadlage;M. Kay;J. D. Ingalls;A. Duncan;Shawn A. Ashley
的三电平单元（TLC）NAND闪存的总电离剂量响应被证明是足够低的数据损坏可能会发生作为一个X射线检查的结果。在实时X射线源中，仅需要对应于仅50 rad（Si）的总剂量的几秒钟的X射线曝光来引起误差。深入的总剂量分析显示了内存和数据模式的哪些页面最容易受到辐射的影响。结果表明，TLC NAND闪存设备不适合在高辐射环境中使用，并且在将它们暴露于即使是像电路板检查中存在的小X射线暴露时也必须小心。
The total ionizing dose response of a triple-level-cell (TLC) NAND flash is shown to be low enough that data corruption can occur as a result of an x-ray inspection. Only a few seconds of x-ray exposure corresponding to a total dose of merely 50 rad(Si) in a real-time x-ray source are required to induce errors. An in-depth total dose analysis shows which pages of the memory and data patterns are the most susceptible to radiation. The results show that TLC NAND flash devices are not suitable for use in high radiation environments, and that care must be taken when exposing them to even small x-ray exposures like those present in a circuit board inspection.