Sulfide Nanocrystal Inks for Dense Cu(In1-xGax)(S1-ySey)2 Absorber Films and Their Photovoltaic Performance
Sulfide Nanocrystal Inks for Dense Cu(In1-xGax)(S1-ySey)2 Absorber Films and Their Photovoltaic Performance
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DOI：
10.1021/nl901538w
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发表时间：
2009-08-01
期刊：
影响因子：
10.8
通讯作者：
Agrawal, Rakesh
中科院分区：
文献类型：
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作者：
Guo, Qijie;Ford, Grayson M.;Agrawal, Rakesh
胶体合成高质量纳米晶体的最新进展为制造低成本、高效率的光伏器件开辟了新的途径。在此之前，我们展示了CuInSe2纳米晶在制备CuInSe2薄膜太阳能电池中的应用。在这些器件中，烧结纳米晶薄膜可以得到相对致密的CuInSe2薄膜，其中含有一些空隙夹杂物。在这里，我们提出了一种通用的方法来消除烧结纳米晶体薄膜中的空隙，通过反应产生可控的薄膜体积膨胀。这是通过首次合成了由铜(In_(1-x)GaX)S-2(CIGS)组成的纳米晶墨水来证明的。纳米晶薄膜形成后，纳米晶暴露在硒蒸气中，在此过程中，大部分硫被硒取代。完全替代可产生类似于14.6%的体积膨胀，并可重复地产生高致密的器件质量的CIGSSe吸收膜，同时减少了空隙空间。用这种方法制备的CIGSSe吸收膜制作的太阳能电池在标准AM1.5光照下的功率转换效率为4.76%(基于有源非阴影面积的5.55%)。
Recent developments in the colloidal synthesis of high quality nanocrystals have opened up new routes for the fabrication of low-cost efficient photovoltaic devices. Previously, we demonstrated the utility of CuInSe2 nanocrystals in the fabrication of CuInSe2 thin film solar cells. In those devices, sintering the nanocrystal film yields a relatively dense CuInSe2 film with some void space inclusions. Here, we present a general approach toward eliminating void space in sintered nanocrystal films by utilizing reactions that yield a controlled volume expansion of the film. This is demonstrated by first synthesizing a nanocrystal ink composed of Cu(In1-xGax)S-2 (CIGS). After nanocrystal film formation, the nanocrystals are exposed to selenium vapor during which most of the sulfur is replaced by selenium. Full replacement produces a similar to 14.6% volume expansion and reproducibly leads to good dense device-quality CIGSSe absorber films with reduced inclusion of void space. Solar cells made using the CIGSSe absorber films fabricated by this method showed a power conversion efficiency of 4.76% (5.55% based on the active nonshadowed area) under standard AM1.5 illumination.