Hole mobility in Mg-doped p-type InN films
Hole mobility in Mg-doped p-type InN films
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DOI：
10.1063/1.2906374
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发表时间：
2008-03-31
影响因子：
4
通讯作者：
Yoshikawa, Akihiko
中科院分区：
文献类型：
--
作者：
Wang, Xinqiang;Che, Song-Bek;Yoshikawa, Akihiko
在相同的生长/掺杂条件下生长不同厚度的mg掺杂p型InN层，使得它们的净受体浓度几乎相同（3-6）× 10(18) cm(-3)，通过电解质电容电压测量证实了这一点。通过薄片总电导率随厚度的斜率，可以提取高密度表面电子下p-InN区域的电导率，其斜率约为8.1 Omega(-1) cm（-1）。在空穴有效质量为0.42m(0)， Mg受体活化能为61 meV的条件下，得到的空穴浓度约为（1.4 ~ 3.0）x10(18) cm(-3)，空穴迁移率约为17 ~ 36 cm(2)/V s。(C) 2008年美国物理研究所。
Mg-doped p-type InN layers with different thicknesses were grown under the same growth/doping conditions so that their net acceptor concentrations were almost the same (3-6)x10(18) cm(-3), which were confirmed by electrolyte capacitance-voltage measurements. The conductivity of p-InN region embedded under high density surface electrons could be extracted through the slope of total sheet conductivity against thickness, which was about 8.1 Omega(-1) cm(-1). Then, corresponding hole mobility was determined to be about 17-36 cm(2)/V s for the hole concentrations of about (1.4-3.0)x10(18) cm(-3) obtained by providing the hole effective mass and Mg acceptor activation energy as 0.42m(0) and 61 meV, respectively. (C) 2008 American Institute of Physics.