Four Dibenzofuran‐Terminated High‐Triplet‐Energy Hole Transporters for High‐Efficiency and Long‐Life Organic Light‐Emitting Devices
Four Dibenzofuran‐Terminated High‐Triplet‐Energy Hole Transporters for High‐Efficiency and Long‐Life Organic Light‐Emitting Devices
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用于高效、长寿命有机发光器件的四种二苯并呋喃封端的高三重态能量空穴传输体
DOI：
10.1002/chem.202104408
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Kido Junji
中科院分区：
文献类型：
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作者：
Sasabe Hisahiro;Araki Suguru;Abe Shoki;Ito Nozomi;Kumada Kengo;Noda Taito;Sukegawa Yoshihito;Yokoyama Daisuke;Kido Junji
空穴转运体在接近阴离子状态时的弱稳定性是开发长寿命有机发光器件（oled）的主要瓶颈之一。因此，在这项研究中，我们开发了一系列热稳定性和电稳定性的空穴转运体，这些空穴转运体末端覆盖了四个二苯并呋喃单元。这些材料表现出i)向阴离子态的高键解离能（BDE）， ii)高玻璃化转变温度（Tg>130°C）和iii)高三重态能量（ET>2.7 eV），从而实现了大约20%的高外量子效率（EQE），并显着延长了热激活延迟荧光（TADF）和磷光oled的稳定性，在1000 cd m−2下的工作寿命为50% (LT50) 20 000 - 30 000 h。此外，研究它们的结构-性质关系揭示了电离势（IP）， BDE和tg3是延长oled中空穴-转运体寿命的关键先决条件。
The weak stability of a hole‐transporter upon approaching the anion state is one of the major bottlenecks for developing long‐life organic light‐emitting devices (OLEDs). Therefore, in this study, we developed a series of thermally and electrically stable hole‐transporters that are end‐capped with four dibenzofuran units. These materials exhibit i) high bond dissociation energy (BDE) toward the anion state, ii) a high glass transition temperature (Tg>130 °C), and iii) high triplet energy (ET>2.7 eV), thereby enabling approximately 20 % high external quantum efficiency (EQE) and significantly prolonging the stability of both thermally activated delayed fluorescent (TADF) and phosphorescent OLEDs with an operation lifetime at 50 % (LT50) of 20 000–30 000 h at 1000 cd m−2. In addition, investigating their structure‐property relationship revealed that ionization potential (IP), BDE, andTgare critical prerequisites for the hole‐transporter to prolong lifetime in OLEDs.