Hydrogen induced imprint mechanism of Pt/PZT/Pt capacitor by low temperature hydrogen treatment
Hydrogen induced imprint mechanism of Pt/PZT/Pt capacitor by low temperature hydrogen treatment
复制标题
低温氢处理Pt/PZT/Pt电容器氢致压印机理
DOI：
10.1080/10584589908210175
复制
发表时间：
1999
期刊：
影响因子：
--
通讯作者：
Shin
中科院分区：
文献类型：
--
作者：
H. Kanaya;T. Iwamoto;Y. Takahagi;I. Kunishima;Shin
摘要我们发现低温低压氢退火会引起Pt/PZT/Pt电容器的P-V滞回线产生严重的电压漂移。位移的量取决于退火温度和氢气压力，并且在60°C，10分钟时为约0.8V，230毫托。从西姆斯分析，它被发现，氢积累在Pt和PZT之间的界面退火后。电压漂移随着界面处氢浓度的增加而增加。积累的氢被认为是减少PZT膜，并在界面处产生氧空位，其充当固定的正电荷。位移方向表明，指向底部电极的内部偏置场形成在PZT膜。这表明氢处理导致主要在顶部Pt和PZT之间的界面处形成固定的正电荷。详细的西姆斯分析表明，靠近底部电极的PZT是导电的。因此，氧气瓶的...
Abstract We found that low temperature and low pressure hydrogen annealing induced a severe voltage shift (imprint) of P – V hysteresis loop of Pt/PZT/Pt capacitor. The amount of shift depended on the annealing temperature and hydrogen pressure, and was about 0.8 V at 60°C, 10 min., 230 mTorr. From SIMS analyses, it was found that hydrogen accumulated at the interfaces between Pt and PZT after the annealing. The voltage shift increased with the increase in hydrogen concentration at the interfaces. The accumulated hydrogen is thought to reduce the PZT film and create oxygen vacancies at the interfaces, which act as fixed positive charges. The shift direction indicates that an internal bias field directed toward the bottom electrode was formed in the PZT film. This indicates that the hydrogen treatment resulted in a fixed positive charge being formed mainly at the interface between the top Pt and PZT. Detailed SIMS analyses revealed that PZT near the bottom electrode was conductive. Therefore, the oxygen va...