Energetics of quantum antidot states in the quantum Hall regime
Energetics of quantum antidot states in the quantum Hall regime
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DOI:
10.1103/physrevb.57.r4273
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发表时间:
1998-02-15
影响因子:
3.7
通讯作者:
Goldman, VJ
中科院分区:
文献类型:
--
作者:
Maasilta, IJ;Goldman, VJ
We report experiments on the energy structure of antidot-bound states. By measuring resonant tunneling linewidths as a function of temperature, we determine the coupling to the remote global gate voltage and find that the effects of interelectron interaction dominate. Within a simple model, we also determine the energy spacing of the antidot-bound states, self-consistent edge electric field, and edge excitation drift velocity. [S0163-1829(98)50512-7].