An Evaluation of Silicon Damage Resulting from Ultrasonic Wire Bonding
An Evaluation of Silicon Damage Resulting from Ultrasonic Wire Bonding
复制标题
超声波引线键合造成的硅损伤的评估
DOI：
10.1109/irps.1976.362727
复制
发表时间：
1976
期刊：
影响因子：
--
通讯作者：
V. Winchell
中科院分区：
文献类型：
--
作者：
V. Winchell
超声波引线键合是一个动态过程，已被发现会对保护不当的硅造成材料损坏。去除金属和氧化物后，通过在硅中产生蒸汽氧化引起的堆垛层错来检测损坏。对（100）和（111）取向的硅进行了评估，主要在那些（111）平面上发现断层，这些平面与表面的交线最接近垂直于超声运动的施加方向。堆垛层错主要出现在键的外周。除了超声波运动方向和观察到的断层面之间的相关性之外，不同的断层面在粘结的趾部和跟部处起作用。对于使用 2 密耳键合线的正常超声波键合参数和标准金属化厚度 (10 KÅ)，不会引起堆垛层错。这种分析方法提供了一种评估材料和加工变化的方法，以提高粘合可靠性。
Ultrasonic wire bonding is a dynamic process which has been found to introduce material damage to improperly protected silicon. Damage is detected through the generation of steam oxidation induced stacking faults in the silicon after the metal and oxides have been removed. Silicon of both (100) and (111) orientations were evaluated with faulting being found predominately on those (111) planes whose lines of interesection with the surface were most nearly perpendicular to the applied direction of ultrasonic motion. Stacking faults predominate at the outer periphery of the bond. In addition to a correlation between the direction of ultrasonic motion and the fault planes observed, different fault planes operate at the toe and heel of the bond. No stacking faults are induced for normal ultrasonic bonding parameters and standard thicknesses of metallization (10 KÅ) using 2-mil bonding wire. This method of analysis provides a means for evaluating changes in materials and processing to improve bond reliability.