Near-unity below-band-gap absorption by microstructured silicon
Near-unity below-band-gap absorption by microstructured silicon
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DOI：
10.1063/1.1358846
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发表时间：
2001-03-26
影响因子：
4
通讯作者：
Karger, A
中科院分区：
文献类型：
--
作者：
Wu, C;Crouch, CH;Karger, A
我们增加了硅的光的吸收率约90%，从近紫外线（0.25 μ m）到近红外线（2.5 μ m）的表面微结构，使用激光化学蚀刻。显著的吸收率很可能来自于硅晶格中的高密度杂质和结构缺陷，并通过表面纹理增强。微结构雪崩光电二极管显示出显着增强的带隙以下的光电流产生在1.06和1.31妈妈，表明在红外光电探测器中使用的承诺。(C)2001年美国物理学会。
We increased the absorptance of light by silicon to approximately 90% from the near ultraviolet (0.25 mum) to the near infrared (2.5 mum) by surface microstructuring using laser-chemical etching. The remarkable absorptance most likely comes from a high density of impurities and structural defects in the silicon lattice, enhanced by surface texturing. Microstructured avalanche photodiodes show significant enhancement of below-band-gap photocurrent generation at 1.06 and 1.31 mum, indicating promise for use in infrared photodetectors. (C) 2001 American Institute of Physics.