A silicon nanocrystals based memory
A silicon nanocrystals based memory
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DOI：
10.1063/1.116085
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发表时间：
1996-03-04
影响因子：
4
通讯作者：
Chan, K
中科院分区：
文献类型：
--
作者：
Tiwari, S;Rana, F;Chan, K
描述了一种新的存储器结构，其使用来自存储在硅纳米晶体（尺寸约为5 nm）中的电荷的阈值移位。该器件利用纳米晶体中的电子的直接隧穿和存储。纳米晶体的有限尺寸和电容限制了存储电子的数量。库仑阻塞效应在这些结构中可能是重要的，但对于它们的操作不是必需的。在低于2.5V的工作电压下，0.2- 0.4V的阈值漂移与读取和写入时间小于100纳秒的实验已经获得。保留时间以天和周为单位测量，并且结构已经在超过10（9）个循环中操作而没有性能降低。这种纳米存储器表现出高密度和低功耗所需的特性。(C)1996年美国物理学会。
A new memory structure using threshold shifting from charge stored in nanocrystals of silicon (approximate to 5 nm in size) is described. The devices utilize direct tunneling and storage of electrons in the nanocrystals. The limited size and capacitance of the nanocrystals limit the numbers of stored electrons. Coulomb blockade effects may be important in these structures but are not necessary for their operation. The threshold shifts of 0.2-0.4 V with read and write times less than 100's of a nanosecond at operating voltages below 2.5 V have been obtained experimentally. The retention times are measured in days and weeks, and the structures have been operated in an excess of 10(9) cycles without degradation in performance. This nanomemory exhibits characteristics necessary for high density and low power. (C) 1996 American Institute of Physics.