Energieverlustmessungen an III–V-Verbindungen
Energieverlustmessungen an III–V-Verbindungen
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Energieeverlustmessungen 和 III-V-Verbindungen
DOI：
10.1007/bf01394892
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发表时间：
1969
期刊：
影响因子：
--
通讯作者：
C. Festenberg
中科院分区：
文献类型：
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作者：
C. Festenberg
用55 keV电子对III-V族化合物GaP、GaAs、GaSb、InAs和InSb进行了能量损失测量。延迟效应变得重要，因为对于这些物质，切伦科夫辐射的条件得到满足。这些在能量损失谱中产生额外的峰;测量其角分布及其对箔厚度的依赖性。实验结果与Kröger计算的考虑延迟后的能量损失概率符合得很好，当散射角θ = 0.6; 0.6 mrad时，延迟效应和表面效应消失。然后可以确定能量损失函数Im（1/Im）。通过KramersKronig分析，计算了光学常数λ 1和λ 2。这些值与光学测量获得的数据一致。
Energy loss measurements with 55 keV electrons were made on the III–V compounds GaP, GaAs, GaSb, InAs and InSb. Retardation effects become important, because for these substances the condition for Cerenkov radiation is fulfilled. These produce an additional peak in the energy loss spectrum; its angular distribution and its dependance on the foil thickness were measured. The experimental results are in good agreement with the energy loss probability calculated by Kröger taking into account the retardation.Retardation- and surface effects vanish for scattering anglesθ≧0.6; 0.6 mrad. Then it is possible to determine the energy loss function Im(1/ɛ). By means of the KramersKronig analysis the optical constantsɛ1 andɛ2 were computed. The values are in agreement with data obtained from optical measurements.