The Composition and Properties of PECVD Silicon Oxide Films
The Composition and Properties of PECVD Silicon Oxide Films
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PECVD氧化硅薄膜的成分与性能
DOI：
10.1149/1.2114272
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发表时间：
1985
期刊：
影响因子：
--
通讯作者：
R. Gleason
中科院分区：
文献类型：
--
作者：
P. Pan;L. Nesbit;R. Douse;R. Gleason
等离子体增强化学气相沉积（PECVD）氧化硅薄膜是通过和的反应制备的。得到了沉积速率随流速、射频功率和总压力的变化关系。测量了不同流速下沉积样品的膜组成和性能。对于流速比<3.5的沉积，获得了富Si膜。样品退火后折射率增加，薄膜厚度减小。在含有10份氟化铵和1份氢氟酸（10：1 BHF）的溶液中的蚀刻速率和折射率随着样品中Si：O比的增加而降低。发现所有富Si膜的键。在所有样品中均观察到Si-OH和H-OH键。在富Si膜中发现了Si、和相。在恒定电场下，薄膜电导率随Si：O比的增加而增加.对于PECVD和富Si的Si-O膜观察到电子陷阱的证据。
Plasma‐enhanced chemical vapor‐deposited (PECVD) silicon oxide films were prepared by the reaction of and. The deposition rate as a function of flow rate, RF power, and total pressure was obtained. The film composition and properties for samples deposited with different flow rates were measured. Si‐rich films were obtained for the deposition with flow rate ratio of < 3.5. The refractive index increased and film thickness decreased after samples were annealed. Etch rate in a solution containing ten parts of ammonium fluoride and one part hydrofluoric acid (10:1 BHF) and refractive index decreased by increasing the Si:O ratio in samples. The bonds were found for all Si‐rich films. Both Si‒OH and H‒OH bonds were observed for all samples. The phases Si, , and were found for Si‐rich films. At a constant field, the film conductivity increased with increasing Si:O ratio. Evidence of electron traps was observed for PECVD and Si‐rich Si‐O films.