Relaxation of compressive strain by inclining threading dislocations in Al0.45Ga0.55N epilayer grown on AlN/sapphire templates using graded-AlxGa1−xN/AlN multi-buffer layers
Relaxation of compressive strain by inclining threading dislocations in Al0.45Ga0.55N epilayer grown on AlN/sapphire templates using graded-AlxGa1−xN/AlN multi-buffer layers
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DOI：
10.1088/0022-3727/42/3/035311
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发表时间：
2009-02
期刊：
影响因子：
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通讯作者：
Q. Fu;T. Peng;F. Mei;Y. Pan;L. Liao;C. Liu
中科院分区：
文献类型：
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作者：
Q. Fu;T. Peng;F. Mei;Y. Pan;L. Liao;C. Liu
采用射频辅助分子束外延技术在AlN/蓝宝石模板上生长了无裂纹的Al0.45Ga0.55N外延层，分别采用梯度AlxGa 1 −xN/AlN多层缓冲层（MBLs）和无梯度AlxGa 1 −xN/AlN多层缓冲层（MBLs）。通过使用梯度AlxGa 1 −xN/AlN MBLs，在Al0.45Ga0.55N外延层中实现了位错的显著减少。透射电子显微镜和拉曼光谱分析表明，Al 0. 45 Ga 0. 55 N外延层的压应变通过刃穿位错（TD）的倾斜得到有效弛豫。并对边缘TD倾斜的驱动力进行了讨论。
Crack-free Al0.45Ga0.55N epilayers with and without graded-AlxGa1−xN/AlN multi-buffer layers (MBLs) were grown on AlN/sapphire templates by radio-frequency assisted molecular beam epitaxy. A significant reduction in dislocations was achieved in the Al0.45Ga0.55N epilayer by using graded-AlxGa1−xN/AlN MBLs. Transmission electron microscopy and Raman spectroscopy analysis revealed that the compressive strain of the Al0.45Ga0.55N epilayer was effectively relaxed through the inclination of edge threading dislocations (TDs). The driving force for the inclination of edge TDs was also discussed.