Electron-Ion Recombination in Dense Plasmas
Electron-Ion Recombination in Dense Plasmas
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致密等离子体中的电子-离子复合
DOI：
10.1103/physrev.125.795
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发表时间：
1962
期刊：
影响因子：
--
通讯作者：
J. Hirschberg
中科院分区：
文献类型：
--
作者：
E. Hinnov;J. Hirschberg
在氦和氢的磁约束等离子体中测量了复合率和余辉线发射的特征，电子密度为10/sup 13/ cm/sup -3/ 量级，初始电离度为50%量级。电子密度和温度是从源自高激发态的谱线强度的绝对强度测量推导出来的，与微波相移和等离子体电导率测量获得的结果非常一致。结果用电子-离子三体复合过程来解释。该过程的复合系数计算为电子温度和密度的函数。 （授权）
The rate of recombination and the characteristics of the afterglow line emission were measured in magnetically confined plasmas of helium and hydrogen, with electron densities of the order of 10/sup 13/ cm/sup -3/ and degree of ionization initially of the order of 50%. Electron densities and temperatures are dedueed from absolute intensity measurements of spectrum line intensities originating from highly excited states, in good agreement with those obtained from microwave phase shift and plasma conductivity measurements. Results are explained in terms of an electronelectron-ion three-body recombination process. The recombination coefficient for this process is calculated as a function of electron temperature and density. (auth)