Intersection Nodes of Basal Screw Dislocations as Luminous Quantum Dots in GaN
Intersection Nodes of Basal Screw Dislocations as Luminous Quantum Dots in GaN
复制标题
GaN 中作为发光量子点的基底螺旋位错的交叉节点
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
O. Vyvenko
中科院分区：
文献类型：
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作者：
O. Medvedev;O. Vyvenko
首次报道了在GaN直基底螺位错的交叉节点处形成具有特定光谱发光带的发光点的原位直接阴极发光观察。在电子束激发下，由于直螺旋位错之间的相互作用，在3.3 eV附近发光的节点的形成进行，直螺旋位错在3.1-3.2 eV处具有自己的发光带。提出并讨论了完全位错和解离位错的位错节点结构的可能构型，以及交叉相关发光（IRL）的性质。IRL的起源被初步归因于由扩展位错节点形成的量子点的电子态之间的光学跃迁，所述扩展位错节点由30°部分位错包围的I2层错组成。
For the first time, in situ direct cathodoluminescence observation of the formation of luminous dots with a particular spectral luminescence band at the intersection nodes of straight basal screw dislocations in GaN is reported. The formation of the nodes that luminesced at around 3.3 eV proceeded under electron beam excitation as a result of interaction between straight screw dislocations, which possessed an own luminescence band at 3.1–3.2 eV. Possible configurations of the structure of dislocation nodes for the perfect and for the dissociated dislocations are presented and discussed, together with the properties of intersection‐related luminescence (IRL). The origin of IRL is tentatively ascribed to the optical transition between electronic states of quantum dots formed by extended dislocation nodes, consisting of I2 stacking faults bounded by 30° partial dislocations.