Zero-Bias Visible to Near-Infrared Horizontal p-n-p TiO2 Nanotubes Doped Monolayer Graphene Photodetector
Zero-Bias Visible to Near-Infrared Horizontal p-n-p TiO2 Nanotubes Doped Monolayer Graphene Photodetector
复制标题
零偏压可见光到近红外水平p-n-p TiO2纳米管掺杂单层石墨烯光电探测器
DOI：
10.3390/molecules24101870
复制
发表时间：
2019-05-02
期刊：
影响因子：
4.6
通讯作者：
Wang, Jun
中科院分区：
文献类型：
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作者：
Huang, Zehua;Ji, Chunhui;Wang, Jun
我们提出了一个p-n-p单层石墨烯光电探测器掺杂二氧化钛纳米管检测从可见光到近红外（405至1310 nm）区域。内置电场将光生电子和空穴分离以产生光电流，而无需偏置电压，这使得器件具有低功耗。此外，探测器对光照区域非常敏感，我们用能带理论分析了其原因。探测器的响应时间约为30 ms。水平p-n-p器件在零偏压光电应用中是一个合适的候选者。
We present a p-n-p monolayer graphene photodetector doped with titanium dioxide nanotubes for detecting light from visible to near-infrared (405 to 1310 nm) region. The built-in electric field separates the photo-induced electrons and holes to generate photocurrent without bias voltage, which allows the device to have meager power consumption. Moreover, the detector is very sensitive to the illumination area, and we analyze the reason using the energy band theory. The response time of the detector is about 30 ms. The horizontal p-n-p device is a suitable candidate in zero-bias optoelectronic applications.