A High Performance Delta-Sigma Modulator for Neurosensing
A High Performance Delta-Sigma Modulator for Neurosensing
复制标题
用于神经传感的高性能 Delta-Sigma 调制器
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
Zhi Yang
中科院分区：
文献类型：
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作者：
Jian Xu;Menglian Zhao;Xiaobo Wu;Md Kafiul Islam;Zhi Yang
记录的神经数据经常受到由各种来源触发的大幅度伪影的破坏，如受试者运动、器官运动、电磁干扰和电极表面的放电。为了防止系统饱和和电子设备因这些大的伪影而发生故障，需要用于数据采集的宽动态范围，这很难实现，并且将需要过多的电路面积和功率来实现。本文介绍了一种高性能的Delta-Sigma调制器，并提出了几种设计技术和使能模块，以减少电路面积和功耗。该调制器采用0.18-μm cmos工艺制作。该芯片采用1.0V电源供电，在10 kHz带宽内集成时，可实现85分贝的峰值信噪比(SNDR)和87分贝的动态范围。调制器的总功耗为13μW，相当于45 fJ/转换步长的品质因数。这些具有竞争力的电路规格使该设计成为构建高精度神经传感器的良好候选者。
Recorded neural data are frequently corrupted by large amplitude artifacts that are triggered by a variety of sources, such as subject movements, organ motions, electromagnetic interferences and discharges at the electrode surface. To prevent the system from saturating and the electronics from malfunctioning due to these large artifacts, a wide dynamic range for data acquisition is demanded, which is quite challenging to achieve and would require excessive circuit area and power for implementation. In this paper, we present a high performance Delta-Sigma modulator along with several design techniques and enabling blocks to reduce circuit area and power. The modulator was fabricated in a 0.18-μm CMOS process. Powered by a 1.0-V supply, the chip can achieve an 85-dB peak signal-to-noise-and-distortion ratio (SNDR) and an 87-dB dynamic range when integrated over a 10-kHz bandwidth. The total power consumption of the modulator is 13 μW, which corresponds to a figure-of-merit (FOM) of 45 fJ/conversion step. These competitive circuit specifications make this design a good candidate for building high precision neurosensors.