Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)
Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)
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DOI：
10.1063/1.4927402
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发表时间：
2015-07
期刊：
影响因子：
1.6
通讯作者：
J. Hennig;A. Dadgar;H. Witte;J. Bläsing;A. Lesnik;A. Strittmatter;A. Krost
中科院分区：
文献类型：
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作者：
J. Hennig;A. Dadgar;H. Witte;J. Bläsing;A. Lesnik;A. Strittmatter;A. Krost
我们报道了基于GaN的场效应晶体管（FET）结构，其载流子密度为n = 2.9 1013 cm−2，用于大功率晶体管。通过对在传统GaN/AlN/ alin FET结构之前生长的InGaN层的铟含量进行分级，可以获得对GaN/AlN界面沟道宽度的控制。InGaN层的组成从名义上的xIn = 30%渐变到AlN/AlInN界面下方的纯GaN。模拟揭示了额外的InGaN层对控制器件通道区域内片状载流子密度的势阱宽度的影响。对基于InxGa1−xN/GaN/AlN/Al0.87In0.13N的FET与GaN/AlN/ alin FET基准结构进行基准测试，我们发现ISD的最大电流密度增加= 1300 mA/mm （560 mA/mm）。此外，InGaN层有助于实现更宽的跨导轮廓，并减少泄漏电流。
We report on GaN based field-effect transistor (FET) structures exhibiting sheet carrier densities of n = 2.9 1013 cm−2 for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally xIn = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices. Benchmarking the InxGa1−xN/GaN/AlN/Al0.87In0.13N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of ISD = 1300 mA/mm (560 mA/mm). In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.