Modeling of complex surface structures for ARXPS

Modeling of complex surface structures for ARXPS
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ARXPS 复杂表面结构建模

DOI:
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发表时间:
2008
期刊:
影响因子:
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通讯作者:
F. Oswald
F. Oswald
中科院分区:
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文献类型:
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作者:
S. Oswald;F. Oswald

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角度分辨X射线光电子能谱(ARXPS)在纳米厚度范围内的非破坏性深度分析方面具有很大的潜力。提出了一种利用计算机模拟ARXPS测量的方法,该方法可以在纳米范围内系统地研究具有人工空间非均匀性的表面。对不同结构尺寸的粗糙表面的研究表明,当降低典型长度尺寸时,均匀光滑层越来越能更好地描述非均匀结构。同时,得到的有效复层材料量(或有效复层厚度)也系统性地低于实际。推导了“魔角概念”的局限性。考虑到弹性散射,讨论了该方法可能的改进。版权所有©2008 John Wiley & Sons, Ltd
Angle‐resolved X‐ray photoelectron spectroscopy (ARXPS) has a great potential for nondestructive depth profiling in the nanometer thickness range. A method using computer simulation of ARXPS measurements is presented, which allows systematic studies on surfaces with artificial spatial inhomogeneity in the nanometer‐range. Investigations of rough surfaces with varied structure sizes show that inhomogeneous structures can be increasingly better described by homogeneous smooth layers when lowering the typical length dimensions. In parallel, the obtained effective amount of overlayer material (or effective overlayer thickness), is systematically lower than the real one. Limitations of the ‘magic‐angle concept’ are derived. Possible improvement of the method is discussed by consideration of elastic scattering. Copyright © 2008 John Wiley & Sons, Ltd.