Higher-order band topology
Higher-order band topology
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DOI：
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发表时间：
2021
影响因子：
38.5
通讯作者：
Yanfeng Chen
中科院分区：
文献类型：
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作者：
Biye Xie;Hai-Xiao Wang;Xiujuan Zhang;Peng Zhan;Jian-Hua Jiang;Minghui Lu;Yanfeng Chen
The bulk-edge correspondence, i.e., a topological insulator (TI) has gapless edge states dictated by its bulk topological invariant,.is commonly regarded as a distinctive signature of TIs. In the past years, a new type of TIs is found which hosts, instead,.gapped edge states and gapless hinge or corner states protected by the bulk band topology. These unconventional TIs, termed.higher-order TIs (HOTIs), provide counter-examples of the bulk-edge correspondence, are surprisingly common in crystalline.and quasi-crystalline materials. Here, we review the principles, theories and materials of HOTIs for both electrons and classical.waves. We put an emphasis on the developments of HOTIs in photonic, phononic and circuit systems due to their special.contributions to the field. We elaborate on the physical mechanisms, experimental realizations, novel phenomena and potential.applications in both electronic and classical systems. Based on these discussions, we remark on the trends and challenges in.the field and the impact of higher-order band topology on other scientific disciplines.
