Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETs
Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETs
复制标题
DOI：
10.1109/tnano.2011.2169084
复制
发表时间：
2012-03
影响因子：
2.4
通讯作者：
Chang-Hung Yu;Yu-Sheng Wu;V. Hu;P. Su
中科院分区：
文献类型：
--
作者：
Chang-Hung Yu;Yu-Sheng Wu;V. Hu;P. Su
本文研究了考虑量子限制（QC）的超薄体（UTB）绝缘体上锗（GeOI）和InGaAs-OI n-MOSFET的静电完整性（EI）问题，推导了Schro Schrodinger方程的解析解，并通过TCAD数值模拟进行了验证。虽然高迁移率沟道器件的电子传导路径可以远离前栅界面，由于高沟道介电常数，我们的研究表明，量子限制效应可以移动载流子的质心朝向前栅，因此，提高了UTB设备的亚阈值摆幅（SS）。由于InGaAs、Ge和Si沟道由于不同的量子化有效质量而表现出不同程度的量子限制，因此在对UTB InGaAs-OI、GeOI和SOI MOSFET进行关于亚阈值摆幅和静电完整性的一对一比较时，必须考虑量子限制的影响。
This paper investigates the electrostatic integrity (EI) of ultra-thin-body (UTB) germanium-on-insulator (GeOI) and InGaAs-OI n-MOSFETs considering quantum confinement (QC) using a derived analytical solution of Schrödinger equation verified with TCAD numerical simulation. Although the electron conduction path of the high-mobility channel device can be far from the frontgate interface due to high channel permittivity, our study indicates that the quantum confinement effect can move the carrier centroid toward the frontgate and, therefore, improve the subthreshold swing (SS) of the UTB device. Since InGaAs, Ge, and Si channels exhibit different degrees of quantum confinement due to different quantization effective mass, the impact of quantum confinement has to be considered when one-to-one comparisons among UTB InGaAs-OI, GeOI, and SOI MOSFETs regarding the subthreshold swing and electrostatic integrity are made.