Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications
Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications
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DOI：
10.1088/1674-1056/ab9de6
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发表时间：
2020-09
影响因子：
1.7
通讯作者：
Wenqiang Song;Fei Hou;Feibo Du;Zhiwei Liu;J. Liou
中科院分区：
文献类型：
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作者：
Wenqiang Song;Fei Hou;Feibo Du;Zhiwei Liu;J. Liou
提出了一种用于静电放电（ESD）保护的增强型栅控二极管触发可控硅整流器（EGDTSCR），并在0.18 μ m5 V/24V BCD工艺上实现。建议EGDTSCR构造通过添加两个门控二极管到一个传统的ESD设备称为修改横向可控硅整流器（MLSCR）。利用表面栅控二极管路径的分流效应，宽度为50 μm的EGDTSCR比MLSCR具有更高的失效电流（3.82 A）和保持电压（10.21 V）。（文件）
A robust electron device called the enhanced gated-diode-triggered silicon-controlled rectifier (EGDTSCR) for electrostatic discharge (ESD) protection applications has been proposed and implemented in a 0.18-μm 5-V/24-V BCD process. The proposed EGDTSCR is constructed by adding two gated diodes into a conventional ESD device called the modified lateral silicon-controlled rectifier (MLSCR). With the shunting effect of the surface gated diode path, the proposed EGDTSCR, with a width of 50 μm, exhibits a higher failure current (ie, 3.82 A) as well as a higher holding voltage (ie, 10.21 V) than the MLSCR.(paper)