Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
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DOI：
10.1063/1.120191
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发表时间：
1997-11-03
影响因子：
4
通讯作者：
DenBaars, SP
中科院分区：
文献类型：
--
作者：
Muth, JF;Lee, JH;DenBaars, SP
在抛光蓝宝石衬底上生长的 0.4μm 厚的 GaN 层的吸收系数是通过室温下的透射测量确定的。获得了 A 和 B 激子的强且明确的激子峰。 A、B 和 C 激子特征在 77 K 下清晰可见。在室温下，通过吸收系数分析确定了 A 和 B 激子的能隙 E-g=3.452+/-0.001 eV 和激子结合能 E-x(A,B)=20.4+/-0.5 meV，C 激子的 E-x(C)=23.5+/-0.5 meV。根据测量的吸收系数，结合van Roosbroek 和Shockley 的详细平衡方法，得出辐射常数B=1.1X10(-8) cm(3)/s。 (C) 1997 年美国物理研究所。 [S0003-6951(97)01344-2]。
The absorption coefficient for a 0.4-mu m-thick GaN layer grown on a polished sapphire substrate was determined from transmission measurements at room temperature. A strong, well defined exciton peak for the A and B excitons was obtained. The A, B, and C excitonic features are clearly defined at 77 K. At room temperature, an energy gap E-g=3.452+/-0.001 eV and an exciton binding energy E-x(A,B)=20.4+/-0.5 meV for the A and B excitons and E-x(C)=23.5+/-0.5 meV for the C exciton were determined by analysis of the absorption coefficient. From this measured absorption coefficient, together with the detailed balance approach of van Roosbroek and Shockley, the radiative constant B=1.1X10(-8) cm(3)/s was obtained. (C) 1997 American Institute of Physics. [S0003-6951(97)01344-2].