4H-SiC Schottky diode arrays for X-ray detection
4H-SiC Schottky diode arrays for X-ray detection
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DOI：
10.1016/j.nima.2016.10.002
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发表时间：
2016-12-21
影响因子：
1.4
通讯作者：
Barnett, A. M.
中科院分区：
文献类型：
--
作者：
Lioliou, G.;Chan, H. K.;Barnett, A. M.
用于 X 射线检测的五个 SiC 肖特基光电二极管已在室温下进行了电气特性分析。还对一种代表性二极管在 20 摄氏度至 140 摄氏度的温度范围内进行了电气特性分析。研究了所有五个 X 射线探测器在 30 摄氏度下的电流模式和光子计数 X 射线光谱的性能。这些二极管以阵列形式制造，因此可以作为 2x2 或 1x3 像素阵列运行。尽管这些器件在室温下表现出双势垒高度、高理想因子和高于预期的漏电流（105 kV/cm 内部电场下为 12 nA/cm(2)），但它们在 30 摄氏度下作为未冷却的光谱光子计数软 X 射线探测器运行。测得的能量分辨率（17.4 keV 时的 FWHM，Mo K α）在不同温度下从 1.36 到 1.68 keV 不等。 二极管。
Five SiC Schottky photodiodes for X-ray detection have been electrically characterized at room temperature. One representative diode was also electrically characterized over the temperature range 20 degrees C to 140 degrees C. The performance at 30 degrees C of all five X-ray detectors, in both current mode and for photon counting X-ray spectroscopy was investigated. The diodes were fabricated in an array form such that they could be operated as either a 2x2 or 1x3 pixel array. Although the devices showed double barrier heights, high ideality factors and higher than expected leakage current at room temperature (12 nA/cm(2) at an internal electric field of 105 kV/cm), they operated as spectroscopic photon counting soft X-ray detectors uncooled at 30 degrees C. The measured energy resolution (FWHM at 17.4 keV, Mo K alpha) varied from 1.36 to 1.68 keV among different diodes.