HALL-MOBILITY ANISOTROPY IN GASE
HALL-MOBILITY ANISOTROPY IN GASE
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DOI：
10.1103/physrevb.17.3221
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发表时间：
1978-01-01
影响因子：
3.7
通讯作者：
VASANELLI, L
中科院分区：
文献类型：
--
作者：
AUGELLI, V;MANFREDOTTI, C;VASANELLI, L
霍尔迁移率已被测量的第一次在一个层化合物都沿着和垂直于层。测量已被扩展为温度和电场的脉冲技术的函数。结果表明，这两种迁移率是有限的同极光学声子散射和空穴的有效导电质量是不同的飞行时间测量得出的。此外，霍尔迁移率沿着c轴是明显的场依赖性。得出的结论是，层错是负责之间的差异低场和高场迁移率。
The Hall mobility has been measured for the first time in a layer compound both along and perpendicular to the layers. The measurements have been extended as a function of temperature and of electrical field by a pulse technique. The results indicate that both mobilities are limited by homopolar optical-phonon scattering and that the effective conductivity masses for holes are different from those derived from time-of-flight measurements. Moreover, the Hall mobility along the c axis is evidently field dependent. It is concluded that stacking faults are responsible for the difference between low-field and high-field mobilities.