Barrier inhomogeneities of platinum contacts to 4H-SiC
Barrier inhomogeneities of platinum contacts to 4H-SiC
复制标题
铂触点与 4H-SiC 的势垒不均匀性
DOI：
10.1016/j.spmi.2016.10.034
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发表时间：
2016-12-01
影响因子：
3.1
通讯作者：
Huang, Lingqin
中科院分区：
文献类型：
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作者：
Huang, Lingqin
研究了轻掺杂和高掺杂（1 × 10（16）cm（-3）和1 × 10（18）cm（-3））4 H-SiC对铂接触的阻挡特性。由基于电子发射理论的实验电流-电压数据推导出的两种样品的势垒高度和理想因子值均具有异常的温度依赖性。对于轻掺杂样品，可以通过不均匀BH的单高斯分布（GD）来评论异常，然而对于高掺杂样品，可以通过双高斯分布BH来评论异常。提出了一种基于非均匀BH的GD理论模型来分析金属/SiC接触的电学特性。对于轻掺杂样品，理论模拟的特性与实验数据吻合得很好。然而，在低温范围内观察到的高掺杂样品的理论和实验性质之间的明显差异，表明TE不是占主导地位的传输机制。非均匀BH的双GD可归因于低温下的电子场致发射机制。(C)2016爱思唯尔有限公司版权所有
The barrier properties of platinum contacts to lightly and highly doped (1 x 10(16) cm(-3) and 1 x 10(18) cm(-3)) 4H-SiC are investigated. The values of barrier height (BH) and ideality factor deduced from the experimental current-voltage data on the basis of thermionic emission (TE) theory for both samples are abnormally temperature dependent. The anomalies could be commented by a single Gaussian distribution (GD) of inhomogeneous BHs for the lightly doped sample, however a double Gaussianly distributed BHs for the highly doped sample. A theoretical model based on GD of inhomogeneous BHs is proposed to analyze the electrical characteristics of metal/SiC contact. The theoretical simulated characteristics are well agreement with the experimental data for the lightly doped sample. However, obvious discrepancies between the theoretical and experimental properties are observed for the highly doped sample in the low temperature range, suggesting that TE is not the dominant transport mechanism. The double GD of inhomogeneous BHs could be attributed to thermionic field emission mechanism at low temperatures. (C) 2016 Elsevier Ltd. All rights reserved.