The progression of interface structure through sputtered Co/Cu and Co/Pt multilayer films

The progression of interface structure through sputtered Co/Cu and Co/Pt multilayer films
复制标题

DOI:
10.1088/0953-8984/11/43/310
复制
发表时间:
1999-11
期刊:
Journal of Physics: Condensed Matter
影响因子:
--
通讯作者:
B. D. Fulthorpe;D. Joyce;T. Hase;A. S. Rozatian;B. Tanner;P. Grundy
B. D. Fulthorpe;D. Joyce;T. Hase;A. S. Rozatian;B. Tanner;P. Grundy
中科院分区:
其他
文献类型:
--
作者:
B. D. Fulthorpe;D. Joyce;T. Hase;A. S. Rozatian;B. Tanner;P. Grundy

文献摘要

被引文献

相似文献

The progression of interface structure through some Co/Cu and Co/Pt multilayer systems, grown on silicon and glass substrates respectively, has been studied using grazing incidence x-ray scattering. Simulations of the data shows that the interface characteristics of the Co/Cu system propagate unchanged with increasing numbers of bilayers. The interface roughness, lateral length scale and fractal dimension remain constant across the series of samples. In contrast, a reduction in the interface conformality between top and bottom surfaces with respect to increasing numbers of bilayers is observed in the Co/Pt system; however the roughness correlation between successive layers is largely maintained. Magnetization data for Co/Cu indicate that the Co layer immediately adjacent to the substrate is magnetically `dead'. This could result from mixing of the cobalt and silicon oxide species at the substrate interface.