Application of a novel EBSD-FIB method to the transmission of c + a dislocations through / interfaces Ti-6Al-4V for producing in situ tension transmission electron microscopy specimens
Application of a novel EBSD-FIB method to the transmission of c + a dislocations through / interfaces Ti-6Al-4V for producing in situ tension transmission electron microscopy specimens
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应用新型 EBSD-FIB 方法通过 Ti-6Al-4V 界面传输 c a 位错，以生产原位张力透射电子显微镜样品
DOI：
10.1093/jmicro/dfr077
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Ding R
中科院分区：
文献类型：
--
作者：
Ding R
本文提出了一种新的方法，用于透射电子显微镜（TEM）研究位错行为，即通过相界面的传输。一个双束聚焦离子束显微镜被用来提取定向箔从特定的晶体学的位置在一个样品区域，已被选择使用电子背散射衍射（EBSD）。将箔附着到预先制备的基底上，然后在透射电子显微镜中对其进行应变。通过对Ti-6Al-4V合金中<c + a>位错在α/β界面上的传递行为的研究，证明了该方法的有效性。然而，箔的弯曲阻止了进一步表征实际传输。
A novel method has been developed for preparingin situstraining samples for transmission electron microscopy (TEM) to study dislocation behaviour, here transmission through phase interfaces. A dual-beam focussed ion beam microscope was used to extract oriented foils from locations with specific crystallography in a sample area which had been selected using electron backscattered diffraction (EBSD). The foil was attached to a pre-prepared substrate which was then strained in a transmission electron microscope. The method has been demonstrated successfully by studying <c + a> dislocation transmission through α/β interfaces in a commercial Ti–6Al–4V alloy. However, bending of the foil prevented the actual transmission from being further characterized.