Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots
Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots
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InSb 纳米线量子点中电子各向异性 g 因子的测量
DOI：
10.1088/1361-6528/abbc24
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发表时间：
2021-01-08
期刊：
影响因子：
3.5
通讯作者：
Xu, H. Q.
中科院分区：
文献类型：
--
作者：
Mu, Jingwei;Huang, Shaoyun;Xu, H. Q.
We have measured the Zeeman splitting of quantum levels in few-electron quantum dots (QDs) formed in narrow bandgap InSb nanowires via the Schottky barriers at the contacts under application of different spatially orientated magnetic fields. The effective g-factor tensor extracted from the measurements is strongly anisotropic and level-dependent, which can be attributed to the presence of strong spin–orbit interaction (SOI) and asymmetric quantum confinement potentials in the QDs. We have demonstrated a successful determination of the principal values and the principal axis orientations of the g-factor tensors in an InSb nanowire QD by the measurements under rotations of a magnetic field in the three orthogonal planes. We also examine the magnetic field evolution of the excitation spectra in an InSb nanowire QD and extract a SOI strength of Δso ∼ 180 μeV from an avoided level crossing between a ground state and its neighboring first excited state in the QD.
