Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth
Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth
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DOI：
10.1007/s13391-019-00179-y
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发表时间：
2019-11
影响因子：
2.4
通讯作者：
T. Tsukamoto;N. Hirose;A. Kasamatsu;T. Matsui;Y. Suda
中科院分区：
文献类型：
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作者：
T. Tsukamoto;N. Hirose;A. Kasamatsu;T. Matsui;Y. Suda
我们研究了低温(LT)GeSn缓冲层在附加GeSn层生长过程中对锡表面偏析的影响。在300℃的生长温度下，在硅衬底上形成的GeSn层中观察到了锡的表面偏析，而在300℃下生长的GeSn层在225℃下形成的LT GeSn层中没有观察到锡的表面偏析，而锡的表面偏析受到LT缓冲层的影响。用拉曼光谱研究了300℃下在LTGeSn系缓冲层上生长的GeSn层的结晶度。从GeSn层获得的Ge-Ge拉曼光谱的半高宽约为3.1cmGe−1，这意味着所形成的GeSn层具有良好的结晶性。我们已经成功地证明了LT GeSn层可以限制锡的表面偏析，从而提高了生长温度和改善了GeSn层的结晶度。
AbstractWe investigate the effects of the low-temperature (LT) GeSn buffer layers on Sn surface segregation during the growth of the additional GeSn layers. Sn surface segregation was observed in the GeSn layers formed on Si substrates at the growth temperature of 300 °C. However, there was no Sn surface segregation in the GeSn layers grown at 300 °C on the LT GeSn buffer layers formed at 225 °C. The Sn surface segregation was limited by the effects of the LT buffer layers. Crystallinity of the GeSn layers grown at 300 °C on the LT GeSn buffer layers was investigated by Raman spectroscopy. The full width at half maximum of the Ge–Ge Raman spectrum obtained from the GeSn layers was about 3.1 cm−1, which means that the formed GeSn layers have excellent crystallinity. We have successfully demonstrated that the LT GeSn buffer layers can limit the Sn surface segregation, which increases the growth temperature and improves crystallinity of the GeSn layers.Graphic Abstract