Analysis of LDMOS-SCR ESD protection device for 60V SOI BCD technology

Analysis of LDMOS-SCR ESD protection device for 60V SOI BCD technology
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DOI：
10.1109/edssc.2010.5713671
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发表时间：
2010-12
期刊：
2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)
影响因子：
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通讯作者：
Peng Zhang;Y. Wang;S. Jia;Xing Zhang
Peng Zhang;Y. Wang;S. Jia;Xing Zhang
中科院分区：
其他
文献类型：
--
作者：
Peng Zhang;Y. Wang;S. Jia;Xing Zhang

文献摘要

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A study of two major types of LDMOS-SCR electrostatic discharge protection devices for 60V SOI BCD technology is presented. The difference of the P-anode implant positions influences the triggering mechanism of the two types of devices. The relationship between I–V behavior under ESD and the device parameter is studied. Heat dissipation capability of the device is also presented.