Analysis of a bi-piezoelectric ceramic layer with an interfacial crack subjected to anti-plane shear and in-plane electric loading

Analysis of a bi-piezoelectric ceramic layer with an interfacial crack subjected to anti-plane shear and in-plane electric loading
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DOI:
10.1016/s0997-7538(00)01107-4
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发表时间:
2000-11
影响因子:
4.1
通讯作者:
A. Soh;D. Fang;Kwok-lun Lee
A. Soh;D. Fang;Kwok-lun Lee
中科院分区:
工程技术2区
文献类型:
--
作者:
A. Soh;D. Fang;Kwok-lun Lee

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研究了含中心界面裂纹的双压电陶瓷层在反平面剪切和面内电载荷作用下的行为。采用位错密度函数和傅里叶积分变换方法消除了积分方程的奇异性问题。分别采用不可渗透和可渗透两种不同的裂纹表面电性边界条件,确定了不同几何参数和性能参数下的归一化能量释放率、应力强度因子和电位移强度因子G/G 0、KIII/KIII 0和KD/KD 0。结果表明,压电层的厚度和材料常数对G/G 0、KIII/KIII 0和KD/KD 0的影响是显著的。
The behaviour of a bi-piezoelectric ceramic layer with a centre interfacial crack subjected to anti-plane shear and in-plane electric loading has been studied. The dislocation density functions and the Fourier integral transform method have been employed to eliminate the problem of singular integral equations. The normalized energy release rate, stress and electrical displacement intensity factors, G/G0,KIII/KIII0and KD/KD0, respectively, were determined for different geometric and property parameters by use of two different crack surface electric boundary conditions, i.e. impermeable and permeable. It has been shown that the effects of the thickness and material constants of the piezoelectric layer on all the three parameters, i.e. G/G0,KIII/KIII0and KD/KD0were significant.