Epitaxial Graphene on SiC
Epitaxial Graphene on SiC
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作者：
W. Xiao
石墨烯因其优异的电子性能，是一种有望替代硅的纳米电子材料。在众多制备石墨烯的方法中，碳化硅外延生长在电子应用中具有巨大的潜力。本文首先介绍了石墨烯的能带结构，并解释了能带结构与其电子性能的关系，如反常量子霍尔效应、室温下的高迁移率和碳纳米管的弹道输运等。然后综述了外延生长方法，通过比较表面形貌通过对SiC不同晶面、不同条件下生长的材料的研究，发现炉生长的C面石墨烯尤其优异。随后，讨论了C面石墨烯的电子表征，表明该体系具有狄拉克电子特征，具有良好的性能。
Graphene is a promising nanoelectronic material that may replace silicon owing to its extraordinary electronic properties.Among many other methods of making Graphene,epitaxial growth on silicon carbide is of great potential in electronic application.In this paper,the band structure of Graphene is first introduced and it is explained how the band structure is related to its electronic properties,such as the anomalous quantum Hall effect,high mobility even at room temperature and ballistic transport in carbon nanotubes.The epitaxial growth method is then reviewed.By comparing the surface morphology of the material grown on different crystal face of SiC and in different conditions,it is shown that furnace grown C-face Graphene is particularly exceptional.After that,electronic characterization of C-face Graphene is discussed,where it is shown that the system has characteristics of Dirac electrons and possesses great properties.