Surface electronic structure of electron-doped SrTiO3
Surface electronic structure of electron-doped SrTiO3
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DOI：
10.1016/s0921-4526(97)00238-x
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发表时间：
1997-07-01
期刊：
影响因子：
2.8
通讯作者：
Nishihara, Y
中科院分区：
文献类型：
--
作者：
Haruyama, Y;Aiura, Y;Nishihara, Y
利用紫外光电子能谱（UPS）研究了电子掺杂SrTiO 3的表面电子结构。通过Nb替代Ti，在SrTiO 3的体带隙区域中诱导了两种掺杂峰：具有尖锐费米截止的金属峰和中心位于费米能级（E-F）以下约1.3 eV处的宽峰。这些掺杂峰的特征基本上是相同的，最近报道的情况下的La取代Sr。UPS光谱附近的E-F示出是非常敏感的氧暴露。氧暴露下的行为可以用负吸附物种形成表面偶极层来解释。
The surface electronic structure of electron-doped SrTiO3 has been studied using the ultraviolet photoemission spectroscopy (UPS). By Nb substitution for Ti, two kinds of doping peaks are induced in the bulk band gap region of SrTiO3; a metallic peak with a sharp Fermi cut-off and a broad peak centered at similar to 1.3 eV below the Fermi level (E-F). The feature of these doping peaks is essentially identical to that recently reported in the case of the La substitution for Sr. The UPS spectra near E-F are shown to be very sensitive to the oxygen exposure. The behavior under the oxygen exposure can be explained by the formation of surface dipole layer by negative adsorbed species.