Charging of embedded InAs self-assembled quantum dots by space-charge techniques
Charging of embedded InAs self-assembled quantum dots by space-charge techniques
复制标题
通过空间电荷技术对嵌入式 InAs 自组装量子点进行充电
DOI：
10.1103/physrevb.64.125315
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发表时间：
2001
影响因子：
3.7
通讯作者：
J. Chyi
中科院分区：
文献类型：
--
作者：
Wen‐Hao Chang;Wen;M. Cheng;C. Lai;T. Hsu;N. Yeh;J. Chyi
我们提出的InAs自组装量子点嵌入在空间电荷结构的充电的电气和光学调查的结果。利用导纳谱研究了量子点的电子结构及其电子逃逸机制。我们解决了不同量子点壳层的清晰电导特征，从而能够研究分别从不同壳层逃逸的电子。利用电子填充调制反射率研究了带电效应对带间跃迁的影响。的强度和能量的带间跃迁的修改根据由于保利阻塞和库仑充电效应的电子占据。从这些实验观察获得的信息是有价值的可行的设备应用。
We present the results of both electrical and optical investigations of the charging of InAs self-assembled quantum dots embedded in a space-charge structure. Admittance spectroscopy was employed to study the electronic structures in quantum dots and their electron escape mechanisms. We resolved clear conductance features of different quantum-dot shells, enabling the study of electrons that escaped separately from different shells. Electron-filling modulation reflectance was used to investigate the interband transition influenced by the charging effects. Both the strengths and the energies of the interband transitions were modified in accordance with the electron occupation due to Pauli-blocking and the Coulomb-charging effects. The information acquired from these experimental observations is valuable for feasible device applications.