Semirelativistic behavior of electrons in InSb in crossed magnetic and electric fields.
Semirelativistic behavior of electrons in InSb in crossed magnetic and electric fields.
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InSb 中电子在交叉磁场和电场中的半相对论行为。
DOI：
10.1103/physrevlett.55.983
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发表时间：
1985
影响因子：
8.6
通讯作者：
Merkt
中科院分区：
文献类型：
--
作者：
Zawadzki;Klahn;Merkt
InSb 中传导电子的回旋共振实验是使用金属氧化物半导体结构在交叉磁场和电场中进行的。基于三级k·p带模型成功描述了数据。交叉场中的电子行为被解释为窄带隙半导体中的电子与真空中的相对论性电子之间类比的一个引人注目的例子。
Cyclotron-resonance experiments on conduction electrons in InSb are performed in crossed magnetic and electric fields with use of a metal-oxide-semiconductor structure. The data are successfully described on the basis of a three-level k· p band model. The electron behavior in crossed fields is interpreted as a spectacular example of an analogy between electrons in narrow-gap semiconductors and relativistic electrons in vacuum.