Giant spin relaxation anisotropy in zinc-blende heterostructures
Giant spin relaxation anisotropy in zinc-blende heterostructures
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DOI：
10.1103/physrevb.60.15582
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发表时间：
1999-12-15
影响因子：
3.7
通讯作者：
Golub, LE
中科院分区：
文献类型：
--
作者：
Averkiev, NS;Golub, LE
预测了锌掺杂半导体异质结构的平面内自旋弛豫各向异性。结果表明，当两种自旋弛豫机制（Dyakonov-Perel和Rashba）的效率相当时，其表现尤为明显。证明了沿[001]方向生长的量子阱，自旋弛豫速率张量的主轴分别为[110]和[1 (1)/ bar 0]。[s0163 - 1829(99) 09643 - 5]。
Spin relaxation in-plane anisotropy is predicted for heterostructures based on zinc-blende semiconductors. It is shown that it manifests itself especially brightly if the two spin relaxation mechanisms (Dyakonov-Perel and Rashba) are comparable in efficiency. It is demonstrated that for the quantum well grown along the [001] direction, the main axes of spin relaxation rate tensor are [110] and [1 (1) over bar 0]. [S0163-1829(99)09643-5].