Ga2O3 nanowires preparation at atmospheric pressure
Ga2O3 nanowires preparation at atmospheric pressure
复制标题
常压下Ga2O3纳米线的制备
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
J. Serafińczuk
中科院分区：
文献类型：
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作者：
R. Korbutowicz;A. Stafiniak;J. Serafińczuk
摘要以金属镓为原料，采用常压热合成法制备氧化镓纳米线。使用具有和不具有氧化硅层（0.5 μm）的（100）和（111）取向的硅衬底作为支撑。蒸发的薄金膜沉积在这些硅载体的顶部作为催化剂。在通过快速热处理RTP（在各种温度和时间下）进行热处理之后，通过SEM观察衬底表面，所述快速热处理RTP被应用以制造具有约几十纳米直径的小Au岛。Ga 2 O3的合成在各种条件下进行：改变时间，温度和气体混合物。结果表明，生长出了具有[111]和[002]两种主要生长方向的单斜晶系β-Ga 2 O3纳米结构。通过SEM、PL和X射线方法对所获得的几十微米长的纳米结构进行了研究。
Abstract An attempt has been undertaken to produce gallium oxide nanowires by thermal synthesis from metallic gallium source at atmospheric pressure. Silicon substrates of (1 0 0) and (1 1 1) orientation with and without silicon oxide layers (0.5 μm) were used as support. Evaporated thin gold films were deposited on the top of those silicon carriers as a catalytic agent. After thermal treatment by Rapid Thermal Processing RTP (at various temperatures and times), which was applied to make small Au islands with the diameters of about several tens of nanometers, the substrate surfaces were observed by SEM. The Ga2O3 syntheses were made at various conditions: time, temperature and gas mixture were changed. As a result, monoclinic gallium oxide β-Ga2O3 nanostructures with dominant [1 1 1] and [0 0 2] growth directions were grown. The obtained nanostructures of several tens micrometers length were studied by SEM, PL and X-ray methods.